Bulk amorphous alloy pressure sensor

ABSTRACT

Pressure sensing systems comprising bulk-solidifying amorphous alloys and pressure-sensitive switches containing bulk-solidifying amorphous alloys. The bulk-solidifying amorphous alloys are capable of repeated deformation upon application of pressure, and change their electrical resistivity upon deformation, thereby enabling measurement of the change in resistivity and consequently, measuring the deformation and amount of pressure applied.

FIELD OF THE INVENTION

The present invention relates to pressure sensors comprisingbulk-solidifying amorphous alloys and pressure switches comprisingbulk-solidifying amorphous alloy materials.

BACKGROUND

Pressure sensors find utility in many devices, including pressuretransducers, altimeters, depth measurement devices, switches,diaphragms, and the like. Pressure sensors also may be used in consumerelectronic devices that utilize touch sensor pads or displays. Switchesthat rely on pressing a button or contact pad are well-known and oftenused in consumer electronic products to implement buttons. For example,various consumer electronic devices, e.g., a mobile telephone, apersonal digital assistant, game controller, or remote controller,typically include a plurality of buttons that a user can press to invokevarious operations with respect to such devices. Such buttons can, forexample, be used for function (e.g., send, end, navigate, etc.) buttonsor for buttons of an alphanumeric keypad/keyboard. These buttons in manycases are implemented by dome switches.

A dome switch typically consists of a dome made from metal that can bedeformed temporarily by a user press to invoke a switching action. Then,when the user press is removed, the dome returns to its original,undeformed shape. Today, with many electronic devices, proper operationof buttons is an important requirement for usability and usersatisfaction. With respect to dome switches, the tactile feedbackprovided by dome switches is often very helpful to users of the consumerelectronic products. However, conventional assembly of such buttonsimplemented by dome switches is inefficient and complicated. Generally,a dome must be placed on a substrate and corresponding structures oftenprovide a button or key structure (with or without an actuation nub)that can be pressed downward to engage the dome during a button or keypress. In some designs, activation nubs are provided on the button orkey structure or on the peaks of the domes themselves. The formation ofthe activation nubs is a separate manufacturing step that is tedious andtime-consuming. In addition, the placement of the actuation nubsrelative to the domes is not always as accurate as desired. For example,if the actuation nub does not properly align with the center region of adome, the tactile feedback for such dome switch will be disturbed andtherefore not as robust as intended.

Many such switches typically employ thin crystalline metal materialsthat can be deformed sufficiently to enable the switch to make contactand create a circuit. The material typically is a suitable conductor ofelectricity, thus enabling current to flow upon contact. Materials maybe characterized by their Young's modulus E, also called elasticitymodulus (generally expressed in GPa), which characterizes its resistanceto deformation. Many materials also are characterized by their elasticlimit σ_(e) (generally expressed in GPa), which represents the stressbeyond which the material will plastically deform. Thus, it is possible,for a given thickness, to compare materials by establishing for each onethe ratio of their elastic limit to their Young's modulus σ_(e)/E,wherein the ratio is representative of the elastic deformation of eachmaterial. The higher this ratio is, the greater the elastic deformationof the material.

Because switches on consumer electronic devices are operated frequently,the materials used to fabricate the switch must be capable of repeateddeformation and return to their original configuration. The ability of amaterial to deform reversibly under stress is known as the material'selasticity. Above a certain stress, known as the elastic limit of amaterial or the yield strength, the metal material may deformirreversibly, becoming inelastic, exhibiting plasticity and adverselyaffecting the function and utility of the switch. Crystalline metallicmaterials such as those used in the prior art (e.g., titanium orstainless steel) typically have a low σ_(e)/E ratio. These crystallinematerials therefore have a limited elastic deformation, and may afterrepeated use, ultimately fail.

Moreover, because this elastic limit is low, when it deforms itapproaches its region of plastic deformation under low stresses with therisk that it cannot resume its initial form. To avoid such adeformation, the deformation of the membrane is restricted, i.e. theamplitude of the movement of the membrane is intentionally limited. Dueto the nature of conventional switching systems, more deformable,non-crystalline materials are not practical. That is, the material thatdeforms in a conventional switch, makes contact with electricalconnections to create a circuit. Non-conductive amorphous materials suchas plastics and rubbers, which typically have much greater elasticitythan most crystalline metal materials, therefore cannot be employed inconventional switching systems that rely on the application of pressureto a material, subsequent deformation of that material and then contactto create an electric current.

Pressure sensors measure pressure of gas or liquids, and typicallyoperate by generating an electrical signal as a function of thepressure. Such pressure sensors often are referred to as pressuretransducers, or pressure transmitters, pressure indicators, piezometers,manometers, and the like. These pressure sensors operate by making useof strain gauges attached to a deformable object, such as a diaphragm.As the diaphragm deforms, the strain gauge attached thereto deforms,thereby causing the electrical resistance of the gauge to change. Thechange in electrical resistance then can be measured using a Wheatstonebridge.

SUMMARY

A proposed solution according to embodiments herein for pressure sensorsis to use bulk-solidifying amorphous alloys as the deformable material,and to measure the pressure based on the physical changes of thebulk-solidifying amorphous alloy as it is deformed. In accordance withthese and other embodiments, there is provided a pressure sensorcomprising a bulk-solidifying amorphous alloy, a pressure measurementsystem electrically connected to the bulk-solidifying amorphous alloythat measures the change in resistivity of the bulk-solidifyingamorphous alloy depending on the degree of deformation of thebulk-solidifying amorphous alloy, and provides an output equal to thepressure applied to deform the bulk-solidifying amorphous alloy.

In accordance with another embodiment, there is provided a switchcomprising an actuator capable of being depressed, a bulk-solidifyingamorphous alloy positioned adjacent the actuator, whereby pressing theactuator deforms the bulk-solidifying amorphous alloy. The switchfurther comprises a pressure measurement and control system electricallyconnected to the bulk-solidifying amorphous alloy that measures thechange in resistivity of the bulk-solidifying amorphous alloy, andpresents a switching function when the pressure reaches a predeterminedvalue.

In accordance with an additional embodiment, there is provided anelectronic device that includes at least one switch comprising anactuator capable of being depressed, a bulk-solidifying amorphous alloypositioned adjacent the actuator, whereby pressing the actuator deformsthe bulk-solidifying amorphous alloy. The switch further comprises apressure measurement and control system electrically connected to thebulk-solidifying amorphous alloy that measures the change in resistivityof the bulk-solidifying amorphous alloy, and presents a switchingfunction when the pressure reaches a predetermined value.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 provides a temperature-viscosity diagram of an exemplary bulksolidifying amorphous alloy.

FIG. 2 provides a schematic of a time-temperature-transformation (TTT)diagram for an exemplary bulk solidifying amorphous alloy.

FIG. 3 is a circuit diagram for a constant voltage circuit for use inmeasuring the change in electrical resistance of a bulk-solidifyingamorphous alloy in accordance with an embodiment.

FIG. 4 is a perspective view of an illustrative portable electronicdevice in accordance with an embodiment of the present invention.

FIG. 5 is a schematic diagram of an illustrative portable electronicdevice in accordance with an embodiment of the present invention.

FIG. 6 is an exploded perspective view of an illustrative portableelectronic device in accordance with an embodiment of the presentinvention.

FIG. 7 is a schematic view of a conventional dome switch assembly priorto its being actuated.

FIG. 8 is a schematic view of a conventional dome switch assembly afterit has been actuated.

FIG. 9 is a schematic view of a dome switch assembly according to one ofthe embodiments, prior to its being actuated.

FIG. 10 is a schematic view of a dome switch assembly according to oneof the embodiments after it has been actuated.

FIG. 11 is an exploded view of a simplified dome switch in accordancewith an improved embodiment.

DETAILED DESCRIPTION

All publications, patents, and patent applications cited in thisSpecification are hereby incorporated by reference in their entirety.

The articles “a” and “an” are used herein to refer to one or to morethan one (i.e., to at least one) of the grammatical object of thearticle. By way of example, “a polymer resin” means one polymer resin ormore than one polymer resin. Any ranges cited herein are inclusive. Theterms “substantially” and “about” used throughout this Specification areused to describe and account for small fluctuations. For example, theycan refer to less than or equal to ±5%, such as less than or equal to±2%, such as less than or equal to ±1%, such as less than or equal to±0.5%, such as less than or equal to ±0.2%, such as less than or equalto ±0.1%, such as less than or equal to ±0.05%.

Bulk-solidifying amorphous alloys, or bulk metallic glasses (“BMG”), area recently developed class of metallic materials. These alloys may besolidified and cooled at relatively slow rates, and they retain theamorphous, non-crystalline (i.e., glassy) state at room temperature.Amorphous alloys have many superior properties than their crystallinecounterparts. However, if the cooling rate is not sufficiently high,crystals may form inside the alloy during cooling, so that the benefitsof the amorphous state can be lost. For example, one challenge with thefabrication of bulk amorphous alloy parts is partial crystallization ofthe parts due to either slow cooling or impurities in the raw alloymaterial. As a high degree of amorphicity (and, conversely, a low degreeof crystallinity) is desirable in BMG parts, there is a need to developmethods for casting BMG parts having controlled amount of amorphicity.

FIG. 1 (obtained from U.S. Pat. No. 7,575,040) shows aviscosity-temperature graph of an exemplary bulk solidifying amorphousalloy, from the VIT-001 series of Zr—Ti—Ni—Cu—Be family manufactured byLiquidmetal Technology. It should be noted that there is no clearliquid/solid transformation for a bulk solidifying amorphous metalduring the formation of an amorphous solid. The molten alloy becomesmore and more viscous with increasing undercooling until it approachessolid form around the glass transition temperature. Accordingly, thetemperature of solidification front for bulk solidifying amorphousalloys can be around glass transition temperature, where the alloy willpractically act as a solid for the purposes of pulling out the quenchedamorphous sheet product.

FIG. 2 (obtained from U.S. Pat. No. 7,575,040) shows thetime-temperature-transformation (TTT) cooling curve of an exemplary bulksolidifying amorphous alloy, or TTT diagram. Bulk-solidifying amorphousmetals do not experience a liquid/solid crystallization transformationupon cooling, as with conventional metals. Instead, the highly fluid,non crystalline form of the metal found at high temperatures (near a“melting temperature” Tm) becomes more viscous as the temperature isreduced (near to the glass transition temperature Tg), eventually takingon the outward physical properties of a conventional solid.

Even though there is no liquid/crystallization transformation for a bulksolidifying amorphous metal, a “melting temperature” Tm may be definedas the thermodynamic liquidus temperature of the correspondingcrystalline phase. Under this regime, the viscosity of bulk-solidifyingamorphous alloys at the melting temperature could lie in the range ofabout 0.1 poise to about 10,000 poise, and even sometimes under 0.01poise. A lower viscosity at the “melting temperature” would providefaster and complete filling of intricate portions of the shell/mold witha bulk solidifying amorphous metal for forming the BMG parts.Furthermore, the cooling rate of the molten metal to form a BMG part hasto such that the time-temperature profile during cooling does nottraverse through the nose-shaped region bounding the crystallized regionin the TTT diagram of FIG. 2. In FIG. 2, Tnose is the criticalcrystallization temperature Tx where crystallization is most rapid andoccurs in the shortest time scale.

The supercooled liquid region, the temperature region between Tg and Txis a manifestation of the extraordinary stability againstcrystallization of bulk solidification alloys. In this temperatureregion the bulk solidifying alloy can exist as a high viscous liquid.The viscosity of the bulk solidifying alloy in the supercooled liquidregion can vary between 10¹² Pa s at the glass transition temperaturedown to 10⁵ Pa s at the crystallization temperature, the hightemperature limit of the supercooled liquid region. Liquids with suchviscosities can undergo substantial plastic strain under an appliedpressure. The embodiments herein make use of the large plasticformability in the supercooled liquid region as a forming and separatingmethod.

One needs to clarify something about Tx. Technically, the nose-shapedcurve shown in the TTT diagram describes Tx as a function of temperatureand time. Thus, regardless of the trajectory that one takes whileheating or cooling a metal alloy, when one hits the TTT curve, one hasreached Tx. In FIG. 2, Tx is shown as a dashed line as Tx can vary fromclose to Tm to close to Tg.

The schematic TTT diagram of FIG. 2 shows processing methods of diecasting from at or above Tm to below Tg without the time-temperaturetrajectory (shown as (1) as an example trajectory) hitting the TTTcurve. During die casting, the forming takes place substeantiallysimultaneously with fast cooling to avoid the trajectory hitting the TTTcurve. The processing methods for superplastic forming (SPF) from at orbelow Tg to below Tm without the time-temperature trajectory (shown as(2), (3) and (4) as example trajectories) hitting the TTT curve. In SPF,the amorphous BMG is reheated into the supercooled liquid region wherethe available processing window could be much larger than die casting,resulting in better controllability of the process. The SPF process doesnot require fast cooling to avoid crystallization during cooling. Also,as shown by example trajectories (2), (3) and (4), the SPF can becarried out with the highest temperature during SPF being above Tnose orbelow Tnose, up to about Tm. If one heats up a piece of amorphous alloybut manages to avoid hitting the TTT curve, you have heated “between Tgand Tm”, but one would have not reached Tx.

Typical differential scanning calorimeter (DSC) heating curves ofbulk-solidifying amorphous alloys taken at a heating rate of 20 C/mindescribe, for the most part, a particular trajectory across the TTT datawhere one would likely see a Tg at a certain temperature, a Tx when theDSC heating ramp crosses the TTT crystallization onset, and eventuallymelting peaks when the same trajectory crosses the temperature range formelting. If one heats a bulk-solidifying amorphous alloy at a rapidheating rate as shown by the ramp up portion of trajectories (2), (3)and (4) in FIG. 2, then one could avoid the TTT curve entirely, and theDSC data would show a glass transition but no Tx upon heating. Anotherway to think about it is trajectories (2), (3) and (4) can fall anywherein temperature between the nose of the TTT curve (and even above it) andthe Tg line, as long as it does not hit the crystallization curve. Thatjust means that the horizontal plateau in trajectories might get muchshorter as one increases the processing temperature.

Phase

The term “phase” herein can refer to one that can be found in athermodynamic phase diagram. A phase is a region of space (e.g., athermodynamic system) throughout which all physical properties of amaterial are essentially uniform. Examples of physical propertiesinclude density, index of refraction, chemical composition and latticeperiodicity. A simple description of a phase is a region of materialthat is chemically uniform, physically distinct, and/or mechanicallyseparable. For example, in a system consisting of ice and water in aglass jar, the ice cubes are one phase, the water is a second phase, andthe humid air over the water is a third phase. The glass of the jar isanother separate phase. A phase can refer to a solid solution, which canbe a binary, tertiary, quaternary, or more, solution, or a compound,such as an intermetallic compound. As another example, an amorphousphase is distinct from a crystalline phase.

Metal, Transition Metal, and Non-Metal

The term “metal” refers to an electropositive chemical element. The term“element” in this Specification refers generally to an element that canbe found in a Periodic Table. Physically, a metal atom in the groundstate contains a partially filled band with an empty state close to anoccupied state. The term “transition metal” is any of the metallicelements within Groups 3 to 12 in the Periodic Table that have anincomplete inner electron shell and that serve as transitional linksbetween the most and the least electropositive in a series of elements.Transition metals are characterized by multiple valences, coloredcompounds, and the ability to form stable complex ions. The term“nonmetal” refers to a chemical element that does not have the capacityto lose electrons and form a positive ion.

Depending on the application, any suitable nonmetal elements, or theircombinations, can be used. The alloy (or “alloy composition”) cancomprise multiple nonmetal elements, such as at least two, at leastthree, at least four, or more, nonmetal elements. A nonmetal element canbe any element that is found in Groups 13-17 in the Periodic Table. Forexample, a nonmetal element can be any one of F, Cl, Br, I, At, O, S,Se, Te, Po, N, P, As, Sb, Bi, C, Si, Ge, Sn, Pb, and B. Occasionally, anonmetal element can also refer to certain metalloids (e.g., B, Si, Ge,As, Sb, Te, and Po) in Groups 13-17. In one embodiment, the nonmetalelements can include B, Si, C, P, or combinations thereof. Accordingly,for example, the alloy can comprise a boride, a carbide, or both.

A transition metal element can be any of scandium, titanium, vanadium,chromium, manganese, iron, cobalt, nickel, copper, zinc, yttrium,zirconium, niobium, molybdenum, technetium, ruthenium, rhodium,palladium, silver, cadmium, hafnium, tantalum, tungsten, rhenium,osmium, iridium, platinum, gold, mercury, rutherfordium, dubnium,seaborgium, bohrium, hassium, meitnerium, ununnilium, unununium, andununbium. In one embodiment, a BMG containing a transition metal elementcan have at least one of Sc, Y, La, Ac, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo,W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd,and Hg. Depending on the application, any suitable transitional metalelements, or their combinations, can be used. The alloy composition cancomprise multiple transitional metal elements, such as at least two, atleast three, at least four, or more, transitional metal elements.

The presently described alloy or alloy “sample” or “specimen” alloy canhave any shape or size. For example, the alloy can have a shape of aparticulate, which can have a shape such as spherical, ellipsoid,wire-like, rod-like, sheet-like, flake-like, or an irregular shape. Theparticulate can have any size. For example, it can have an averagediameter of between about 1 micron and about 100 microns, such asbetween about 5 microns and about 80 microns, such as between about 10microns and about 60 microns, such as between about 15 microns and about50 microns, such as between about 15 microns and about 45 microns, suchas between about 20 microns and about 40 microns, such as between about25 microns and about 35 microns. For example, in one embodiment, theaverage diameter of the particulate is between about 25 microns andabout 44 microns. In some embodiments, smaller particulates, such asthose in the nanometer range, or larger particulates, such as thosebigger than 100 microns, can be used.

The alloy sample or specimen can also be of a much larger dimension. Forexample, it can be a bulk structural component, such as an ingot,housing/casing of an electronic device or even a portion of a structuralcomponent that has dimensions in the millimeter, centimeter, or meterrange.

Solid Solution

The term “solid solution” refers to a solid form of a solution. The term“solution” refers to a mixture of two or more substances, which may besolids, liquids, gases, or a combination of these. The mixture can behomogeneous or heterogeneous. The term “mixture” is a composition of twoor more substances that are combined with each other and are generallycapable of being separated. Generally, the two or more substances arenot chemically combined with each other.

Alloy

In some embodiments, the alloy composition described herein can be fullyalloyed. In one embodiment, an “alloy” refers to a homogeneous mixtureor solid solution of two or more metals, the atoms of one replacing oroccupying interstitial positions between the atoms of the other; forexample, brass is an alloy of zinc and copper. An alloy, in contrast toa composite, can refer to a partial or complete solid solution of one ormore elements in a metal matrix, such as one or more compounds in ametallic matrix. The term alloy herein can refer to both a completesolid solution alloy that can give single solid phase microstructure anda partial solution that can give two or more phases. An alloycomposition described herein can refer to one comprising an alloy or onecomprising an alloy-containing composite.

Thus, a fully alloyed alloy can have a homogenous distribution of theconstituents, be it a solid solution phase, a compound phase, or both.The term “fully alloyed” used herein can account for minor variationswithin the error tolerance. For example, it can refer to at least 90%alloyed, such as at least 95% alloyed, such as at least 99% alloyed,such as at least 99.5% alloyed, such as at least 99.9% alloyed. Thepercentage herein can refer to either volume percent or weightpercentage, depending on the context. These percentages can be balancedby impurities, which can be in terms of composition or phases that arenot a part of the alloy.

Amorphous or Non-Crystalline Solid

An “amorphous” or “non-crystalline solid” is a solid that lacks latticeperiodicity, which is characteristic of a crystal. As used herein, an“amorphous solid” includes “glass” which is an amorphous solid thatsoftens and transforms into a liquid-like state upon heating through theglass transition. Generally, amorphous materials lack the long-rangeorder characteristic of a crystal, though they can possess someshort-range order at the atomic length scale due to the nature ofchemical bonding. The distinction between amorphous solids andcrystalline solids can be made based on lattice periodicity asdetermined by structural characterization techniques such as x-raydiffraction and transmission electron microscopy.

The terms “order” and “disorder” designate the presence or absence ofsome symmetry or correlation in a many-particle system. The terms“long-range order” and “short-range order” distinguish order inmaterials based on length scales.

The strictest form of order in a solid is lattice periodicity: a certainpattern (the arrangement of atoms in a unit cell) is repeated again andagain to form a translationally invariant tiling of space. This is thedefining property of a crystal. Possible symmetries have been classifiedin 14 Bravais lattices and 230 space groups.

Lattice periodicity implies long-range order. If only one unit cell isknown, then by virtue of the translational symmetry it is possible toaccurately predict all atomic positions at arbitrary distances. Theconverse is generally true, except, for example, in quasi-crystals thathave perfectly deterministic tilings but do not possess latticeperiodicity.

Long-range order characterizes physical systems in which remote portionsof the same sample exhibit correlated behavior. This can be expressed asa correlation function, namely the spin-spin correlation function:

G(x,x′)=

s(x),s(x′)

In the above function, s is the spin quantum number and x is thedistance function within the particular system. This function is equalto unity when x=x′ and decreases as the distance |x−x′| increases.Typically, it decays exponentially to zero at large distances, and thesystem is considered to be disordered. If, however, the correlationfunction decays to a constant value at large |x−x′|, then the system canbe said to possess long-range order. If it decays to zero as a power ofthe distance, then it can be called quasi-long-range order. Note thatwhat constitutes a large value of |x−x′| is relative.

A system can be said to present quenched disorder when some parametersdefining its behavior are random variables that do not evolve with time(i.e., they are quenched or frozen)—e.g., spin glasses. It is oppositeto annealed disorder, where the random variables are allowed to evolvethemselves. Embodiments herein include systems comprising quencheddisorder.

The alloy described herein can be crystalline, partially crystalline,amorphous, or substantially amorphous. For example, the alloysample/specimen can include at least some crystallinity, withgrains/crystals having sizes in the nanometer and/or micrometer ranges.Alternatively, the alloy can be substantially amorphous, such as fullyamorphous. In one embodiment, the alloy composition is at leastsubstantially not amorphous, such as being substantially crystalline,such as being entirely crystalline.

In one embodiment, the presence of a crystal or a plurality of crystalsin an otherwise amorphous alloy can be construed as a “crystallinephase” therein. The degree of crystallinity (or “crystallinity” forshort in some embodiments) of an alloy can refer to the amount of thecrystalline phase present in the alloy. The degree can refer to, forexample, a fraction of crystals present in the alloy. The fraction canrefer to volume fraction or weight fraction, depending on the context. Ameasure of how “amorphous” an amorphous alloy is can be amorphicity.Amorphicity can be measured in terms of a degree of crystallinity. Forexample, in one embodiment, an alloy having a low degree ofcrystallinity can be said to have a high degree of amorphicity. In oneembodiment, for example, an alloy having 60 vol % crystalline phase canhave a 40 vol % amorphous phase.

Amorphous Alloy or Amorphous Metal

An “amorphous alloy” is an alloy having an amorphous content of morethan 50% by volume, preferably more than 90% by volume of amorphouscontent, more preferably more than 95% by volume of amorphous content,and most preferably more than 99% to almost 100% by volume of amorphouscontent. Note that, as described above, an alloy high in amorphicity isequivalently low in degree of crystallinity. An “amorphous metal” is anamorphous metal material with a disordered atomic-scale structure. Incontrast to most metals, which are crystalline and therefore have ahighly ordered arrangement of atoms, amorphous alloys arenon-crystalline. Materials in which such a disordered structure isproduced directly from the liquid state during cooling are sometimesreferred to as “glasses.” Accordingly, amorphous metals are commonlyreferred to as “metallic glasses” or “glassy metals.” In one embodiment,a bulk metallic glass (“BMG”) can refer to an alloy, of which themicrostructure is at least partially amorphous. However, there areseveral ways besides extremely rapid cooling to produce amorphousmetals, including physical vapor deposition, solid-state reaction, ionirradiation, melt spinning, and mechanical alloying. Amorphous alloyscan be a single class of materials, regardless of how they are prepared.

Amorphous metals can be produced through a variety of quick-coolingmethods. For instance, amorphous metals can be produced by sputteringmolten metal onto a spinning metal disk. The rapid cooling, on the orderof millions of degrees a second, can be too fast for crystals to form,and the material is thus “locked in” a glassy state. Also, amorphousmetals/alloys can be produced with critical cooling rates low enough toallow formation of amorphous structures in thick layers—e.g., bulkmetallic glasses.

The terms “bulk metallic glass” (“BMG”), bulk amorphous alloy (“BAA”),and bulk solidifying amorphous alloy are used interchangeably herein.They refer to amorphous alloys having the smallest dimension at least inthe millimeter range. For example, the dimension can be at least about0.5 mm, such as at least about 1 mm, such as at least about 2 mm, suchas at least about 4 mm, such as at least about 5 mm, such as at leastabout 6 mm, such as at least about 8 mm, such as at least about 10 mm,such as at least about 12 mm. Depending on the geometry, the dimensioncan refer to the diameter, radius, thickness, width, length, etc. A BMGcan also be a metallic glass having at least one dimension in thecentimeter range, such as at least about 1.0 cm, such as at least about2.0 cm, such as at least about 5.0 cm, such as at least about 10.0 cm.In some embodiments, a BMG can have at least one dimension at least inthe meter range. A BMG can take any of the shapes or forms describedabove, as related to a metallic glass. Accordingly, a BMG describedherein in some embodiments can be different from a thin film made by aconventional deposition technique in one important aspect—the former canbe of a much larger dimension than the latter.

Amorphous metals can be an alloy rather than a pure metal. The alloysmay contain atoms of significantly different sizes, leading to low freevolume (and therefore having viscosity up to orders of magnitude higherthan other metals and alloys) in a molten state. The viscosity preventsthe atoms from moving enough to form an ordered lattice. The materialstructure may result in low shrinkage during cooling and resistance toplastic deformation. The absence of grain boundaries, the weak spots ofcrystalline materials in some cases, may, for example, lead to betterresistance to wear and corrosion. In one embodiment, amorphous metals,while technically glasses, may also be much tougher and less brittlethan oxide glasses and ceramics.

Thermal conductivity of amorphous materials may be lower than that oftheir crystalline counterparts. To achieve formation of an amorphousstructure even during slower cooling, the alloy may be made of three ormore components, leading to complex crystal units with higher potentialenergy and lower probability of formation. The formation of amorphousalloy can depend on several factors: the composition of the componentsof the alloy; the atomic radius of the components (preferably with asignificant difference of over 12% to achieve high packing density andlow free volume); and the negative heat of mixing the combination ofcomponents, inhibiting crystal nucleation and prolonging the time themolten metal stays in a supercooled state. However, as the formation ofan amorphous alloy is based on many different variables, it can bedifficult to make a prior determination of whether an alloy compositionwould form an amorphous alloy.

Amorphous alloys, for example, of boron, silicon, phosphorus, and otherglass formers with magnetic metals (iron, cobalt, nickel) may bemagnetic, with low coercivity and high electrical resistance. The highresistance leads to low losses by eddy currents when subjected toalternating magnetic fields, a property useful, for example, astransformer magnetic cores.

Amorphous alloys may have a variety of potentially useful properties. Inparticular, they tend to be stronger than crystalline alloys of similarchemical composition, and they can sustain larger reversible (“elastic”)deformations than crystalline alloys. Amorphous metals derive theirstrength directly from their non-crystalline structure, which can havenone of the defects (such as dislocations) that limit the strength ofcrystalline alloys. For example, one modern amorphous metal, known asVitreloy™, has a tensile strength that is almost twice that ofhigh-grade titanium. In some embodiments, metallic glasses at roomtemperature are not ductile and tend to fail suddenly when loaded intension, which limits the material applicability in reliability-criticalapplications, as the impending failure is not evident. Therefore, toovercome this challenge, metal matrix composite materials having ametallic glass matrix containing dendritic particles or fibers of aductile crystalline metal can be used. Alternatively, a BMG low inelement(s) that tend to cause embitterment (e.g., Ni) can be used. Forexample, a Ni-free BMG can be used to improve the ductility of the BMG.

Another useful property of bulk amorphous alloys is that they can betrue glasses; in other words, they can soften and flow upon heating.This can allow for easy processing, such as by injection molding, inmuch the same way as polymers. As a result, amorphous alloys can be usedfor making sports equipment, medical devices, electronic components andequipment, and thin films. Thin films of amorphous metals can bedeposited as protective coatings via a high velocity oxygen fueltechnique.

A material can have an amorphous phase, a crystalline phase, or both.The amorphous and crystalline phases can have the same chemicalcomposition and differ only in the microstructure—i.e., one amorphousand the other crystalline. Microstructure in one embodiment refers tothe structure of a material as revealed by a microscope at 25×magnification or higher. Alternatively, the two phases can havedifferent chemical compositions and microstructures. For example, acomposition can be partially amorphous, substantially amorphous, orcompletely amorphous.

As described above, the degree of amorphicity (and conversely the degreeof crystallinity) can be measured by fraction of crystals present in thealloy. The degree can refer to volume fraction of weight fraction of thecrystalline phase present in the alloy. A partially amorphouscomposition can refer to a composition of at least about 5 vol % ofwhich is of an amorphous phase, such as at least about 10 vol %, such asat least about 20 vol %, such as at least about 40 vol %, such as atleast about 60 vol %, such as at least about 80 vol %, such as at leastabout 90 vol %. The terms “substantially” and “about” have been definedelsewhere in this application. Accordingly, a composition that is atleast substantially amorphous can refer to one of which at least about90 vol % is amorphous, such as at least about 95 vol %, such as at leastabout 98 vol %, such as at least about 99 vol %, such as at least about99.5 vol %, such as at least about 99.8 vol %, such as at least about99.9 vol %. In one embodiment, a substantially amorphous composition canhave some incidental, insignificant amount of crystalline phase presenttherein.

In one embodiment, an amorphous alloy composition can be homogeneouswith respect to the amorphous phase. A substance that is uniform incomposition is homogeneous. This is in contrast to a substance that isheterogeneous. The term “composition” refers to the chemical compositionand/or microstructure in the substance. A substance is homogeneous whena volume of the substance is divided in half and both halves havesubstantially the same composition. For example, a particulatesuspension is homogeneous when a volume of the particulate suspension isdivided in half and both halves have substantially the same volume ofparticles. However, it might be possible to see the individual particlesunder a microscope. Another example of a homogeneous substance is airwhere different ingredients therein are equally suspended, though theparticles, gases and liquids in air can be analyzed separately orseparated from air.

A composition that is homogeneous with respect to an amorphous alloy canrefer to one having an amorphous phase substantially uniformlydistributed throughout its microstructure. In other words, thecomposition macroscopically comprises a substantially uniformlydistributed amorphous alloy throughout the composition. In analternative embodiment, the composition can be of a composite, having anamorphous phase having therein a non-amorphous phase. The non-amorphousphase can be a crystal or a plurality of crystals. The crystals can bein the form of particulates of any shape, such as spherical, ellipsoid,wire-like, rod-like, sheet-like, flake-like, or an irregular shape. Inone embodiment, it can have a dendritic form. For example, an at leastpartially amorphous composite composition can have a crystalline phasein the shape of dendrites dispersed in an amorphous phase matrix; thedispersion can be uniform or non-uniform, and the amorphous phase andthe crystalline phase can have the same or a different chemicalcomposition. In one embodiment, they have substantially the samechemical composition. In another embodiment, the crystalline phase canbe more ductile than the BMG phase.

The methods described herein can be applicable to any type of amorphousalloy. Similarly, the amorphous alloy described herein as a constituentof a composition or article can be of any type. The amorphous alloy cancomprise the element Zr, Hf, Ti, Cu, Ni, Pt, Pd, Fe, Mg, Au, La, Ag, Al,Mo, Nb, Be, or combinations thereof. Namely, the alloy can include anycombination of these elements in its chemical formula or chemicalcomposition. The elements can be present at different weight or volumepercentages. For example, an iron “based” alloy can refer to an alloyhaving a non-insignificant weight percentage of iron present therein,the weight percent can be, for example, at least about 20 wt %, such asat least about 40 wt %, such as at least about 50 wt %, such as at leastabout 60 wt %, such as at least about 80 wt %. Alternatively, in oneembodiment, the above-described percentages can be volume percentages,instead of weight percentages. Accordingly, an amorphous alloy can bezirconium-based, titanium-based, platinum-based, palladium-based,gold-based, silver-based, copper-based, iron-based, nickel-based,aluminum-based, molybdenum-based, and the like. The alloy can also befree of any of the aforementioned elements to suit a particular purpose.For example, in some embodiments, the alloy, or the compositionincluding the alloy, can be substantially free of nickel, aluminum,titanium, beryllium, or combinations thereof. In one embodiment, thealloy or the composite is completely free of nickel, aluminum, titanium,beryllium, or combinations thereof.

For example, the amorphous alloy can have the formula (Zr, Ti)_(a)(Ni,Cu, Fe)_(b)(Be, Al, Si, B)_(c), wherein a, b, and c each represents aweight or atomic percentage. In one embodiment, a is in the range offrom 30 to 75, b is in the range of from 5 to 60, and c is in the rangeof from 0 to 50 in atomic percentages. Alternatively, the amorphousalloy can have the formula (Zr, Ti)_(b)(Ni, Cu)_(b)(Be)_(c), wherein a,b, and c each represents a weight or atomic percentage. In oneembodiment, a is in the range of from 40 to 75, b is in the range offrom 5 to 50, and c is in the range of from 5 to 50 in atomicpercentages. The alloy can also have the formula (Zr, Ti)_(a)(Ni,Cu)_(b)(Be)_(c), wherein a, b, and c each represents a weight or atomicpercentage. In one embodiment, a is in the range of from 45 to 65, b isin the range of from 7.5 to 35, and c is in the range of from 10 to 37.5in atomic percentages. Alternatively, the alloy can have the formula(Zr)_(a)(Nb, Ti)_(b)(Ni, Cu)_(c)(Al)_(d), wherein a, b, c, and d eachrepresents a weight or atomic percentage. In one embodiment, a is in therange of from 45 to 65, b is in the range of from 0 to 10, c is in therange of from 20 to 40 and d is in the range of from 7.5 to 15 in atomicpercentages. One exemplary embodiment of the aforedescribed alloy systemis a Zr—Ti—Ni—Cu—Be based amorphous alloy under the trade nameVitreloy™, such as Vitreloy-1 and Vitreloy-101, as fabricated byLiquidmetal Technologies, CA, USA. Some examples of amorphous alloys ofthe different systems are provided in Table 1 and Table 2.

TABLE 1 Exemplary amorphous alloy compositions Alloy Atm % Atm % Atm %Atm % Atm % Atm % Atm % Atm % 1 Fe Mo Ni Cr P C B 68.00% 5.00% 5.00%2.00% 12.50% 5.00% 2.50% 2 Fe Mo Ni Cr P C B Si 68.00% 5.00% 5.00% 2.00%11.00% 5.00% 2.50% 1.50% 3 Pd Cu Co P 44.48% 32.35%  4.05% 19.11%  4 PdAg Si P 77.50% 6.00% 9.00% 7.50% 5 Pd Ag Si P Ge 79.00% 3.50% 9.50%6.00%  2.00% 5 Pt Cu Ag P B Si 74.70% 1.50% 0.30% 18.0%  4.00% 1.50%

TABLE 2 Additional Exemplary amorphous alloy compositions (atomic %)Alloy Atm % Atm % Atm % Atm % Atm % Atm % 1 Zr Ti Cu Ni Be 41.20% 13.80%12.50%  10.00% 22.50% 2 Zr Ti Cu Ni Be 44.00% 11.00% 10.00%  10.00%25.00% 3 Zr Ti Cu Ni Nb Be 56.25% 11.25% 6.88%  5.63%  7.50% 12.50% 4 ZrTi Cu Ni Al Be 64.75%  5.60% 14.90%  11.15%  2.60%  1.00% 5 Zr Ti Cu NiAl 52.50%  5.00% 17.90%  14.60% 10.00% 6 Zr Nb Cu Ni Al 57.00%  5.00%15.40%  12.60% 10.00% 7 Zr Cu Ni Al 50.75% 36.23% 4.03%  9.00% 8 Zr TiCu Ni Be 46.75%  8.25% 7.50% 10.00% 27.50% 9 Zr Ti Ni Be 21.67% 43.33%7.50% 27.50% 10 Zr Ti Cu Be 35.00% 30.00% 7.50% 27.50% 11 Zr Ti Co Be35.00% 30.00% 6.00% 29.00% 12 Zr Ti Fe Be 35.00% 30.00% 2.00% 33.00% 13Au Ag Pd Cu Si 49.00%  5.50% 2.30% 26.90% 16.30% 14 Au Ag Pd Cu Si50.90%  3.00% 2.30% 27.80% 16.00% 15 Pt Cu Ni P 57.50% 14.70% 5.30%22.50% 16 Zr Ti Nb Cu Be 36.60% 31.40% 7.00%  5.90% 19.10% 17 Zr Ti NbCu Be 38.30% 32.90% 7.30%  6.20% 15.30% 18 Zr Ti Nb Cu Be 39.60% 33.90%7.60%  6.40% 12.50% 19 Cu Ti Zr Ni 47.00% 34.00% 11.00%   8.00% 20 Zr CoAl 55.00% 25.00% 20.00% 

Other exemplary ferrous metal-based alloys include compositions such asthose disclosed in U.S. Patent Application Publication Nos. 2007/0079907and 2008/0118387. These compositions include the Fe(Mn, Co, Ni, Cu) (C,Si, B, P, Al) system, wherein the Fe content is from 60 to 75 atomicpercentage, the total of (Mn, Co, Ni, Cu) is in the range of from 5 to25 atomic percentage, and the total of (C, Si, B, P, Al) is in the rangeof from 8 to 20 atomic percentage, as well as the exemplary compositionFe48Cr15Mo14Y2C15B6. They also include the alloy systems described byFe—Cr—Mo—(Y,Ln)—C—B, Co—Cr—Mo—Ln—C—B, Fe—Mn—Cr—Mo—(Y,Ln)—C—B, (Fe, Cr,Co)—(Mo,Mn)—(C,B)—Y, Fe—(Co,Ni)—(Zr,Nb,Ta)—(Mo,W)—B,Fe—(Al,Ga)—(P,C,B,Si,Ge), Fe—(Co, Cr,Mo,Ga,Sb)—P—B—C, (Fe, Co)—B—Si—Nballoys, and Fe—(Cr—Mo)—(C,B)—Tm, where Ln denotes a lanthanide elementand Tm denotes a transition metal element. Furthermore, the amorphousalloy can also be one of the exemplary compositions Fe80P12.5C5B2.5,Fe80P11C5B2.5Si1.5, Fe74.5Mo5.5P12.5C5B2.5, Fe74.5Mo5.5P11C5B2.5Si1.5,Fe70Mo5Ni5P12.5C5B2.5, Fe70Mo5Ni5P11C5B2.5Si1.5,Fe68Mo5Ni5Cr2P12.5C5B2.5, and Fe68Mo5Ni5Cr2P11C5B2.5Si1.5, described inU.S. Patent Application Publication No. 2010/0300148.

The amorphous alloys can also be ferrous alloys, such as (Fe, Ni, Co)based alloys. Examples of such compositions are disclosed in U.S. Pat.Nos. 6,325,868; 5,288,344; 5,368,659; 5,618,359; and 5,735,975, Inoue etal., Appl. Phys. Lett., Volume 71, p 464 (1997), Shen et al., Mater.Trans., JIM, Volume 42, p 2136 (2001), and Japanese Patent ApplicationNo. 200126277 (Pub. No. 2001303218 A). One exemplary composition isFe₇₂Al₅Ga₂P₁₁C₆B₄. Another example is Fe₇₂Al₇Zr₁₀Mo₅W₂B₁₅. Anotheriron-based alloy system that can be used in the coating herein isdisclosed in U.S. Patent Application Publication No. 2010/0084052,wherein the amorphous metal contains, for example, manganese (1 to 3atomic %), yttrium (0.1 to 10 atomic %), and silicon (0.3 to 3.1 atomic%) in the range of composition given in parentheses; and that containsthe following elements in the specified range of composition given inparentheses: chromium (15 to 20 atomic %), molybdenum (2 to 15 atomic%), tungsten (1 to 3 atomic %), boron (5 to 16 atomic %), carbon (3 to16 atomic %), and the balance iron.

The aforedescribed amorphous alloy systems can further includeadditional elements, such as additional transition metal elements,including Nb, Cr, V, and Co. The additional elements can be present atless than or equal to about 30 wt %, such as less than or equal to about20 wt %, such as less than or equal to about 10 wt %, such as less thanor equal to about 5 wt %. In one embodiment, the additional, optionalelement is at least one of cobalt, manganese, zirconium, tantalum,niobium, tungsten, yttrium, titanium, vanadium and hafnium to formcarbides and further improve wear and corrosion resistance. Furtheroptional elements may include phosphorous, germanium and arsenic,totaling up to about 2%, and preferably less than 1%, to reduce meltingpoint. Otherwise incidental impurities should be less than about 2% andpreferably 0.5%.

In some embodiments, a composition having an amorphous alloy can includea small amount of impurities. The impurity elements can be intentionallyadded to modify the properties of the composition, such as improving themechanical properties (e.g., hardness, strength, fracture mechanism,etc.) and/or improving the corrosion resistance. Alternatively, theimpurities can be present as inevitable, incidental impurities, such asthose obtained as a byproduct of processing and manufacturing. Theimpurities can be less than or equal to about 10 wt %, such as about 5wt %, such as about 2 wt %, such as about 1 wt %, such as about 0.5 wt%, such as about 0.1 wt %. In some embodiments, these percentages can bevolume percentages instead of weight percentages. In one embodiment, thealloy sample/composition consists essentially of the amorphous alloy(with only a small incidental amount of impurities). In anotherembodiment, the composition includes the amorphous alloy (with noobservable trace of impurities).

In one embodiment, the final parts exceeded the critical castingthickness of the bulk solidifying amorphous alloys.

In embodiments herein, the existence of a supercooled liquid region inwhich the bulk-solidifying amorphous alloy can exist as a high viscousliquid allows for superplastic forming Large plastic deformations can beobtained. The ability to undergo large plastic deformation in thesupercooled liquid region is used for the forming and/or cuttingprocess. As oppose to solids, the liquid bulk solidifying alloy deformslocally which drastically lowers the required energy for cutting andforming. The ease of cutting and forming depends on the temperature ofthe alloy, the mold, and the cutting tool. As higher is the temperature,the lower is the viscosity, and consequently easier is the cutting andforming.

Embodiments herein can utilize a thermoplastic-forming process withamorphous alloys carried out between Tg and Tx, for example. Herein, Txand Tg are determined from standard DSC measurements at typical heatingrates (e.g. 20° C./min) as the onset of crystallization temperature andthe onset of glass transition temperature.

The amorphous alloy components can have the critical casting thicknessand the final part can have thickness that is thicker than the criticalcasting thickness. Moreover, the time and temperature of the heating andshaping operation is selected such that the elastic strain limit of theamorphous alloy could be substantially preserved to be not less than1.0%, and preferably not being less than 1.5%. In the context of theembodiments herein, temperatures around glass transition means theforming temperatures can be below glass transition, at or around glasstransition, and above glass transition temperature, but preferably attemperatures below the crystallization temperature T_(x). The coolingstep is carried out at rates similar to the heating rates at the heatingstep, and preferably at rates greater than the heating rates at theheating step. The cooling step is also achieved preferably while theforming and shaping loads are still maintained.

Electronic Devices

The embodiments herein can be valuable in the fabrication of electronicdevices using a BMG. An electronic device herein can refer to anyelectronic device known in the art. For example, it can be a telephone,such as a cell phone, and a land-line phone, or any communicationdevice, such as a smart phone, including, for example an iPhone™, and anelectronic email sending/receiving device. It can be a part of adisplay, such as a digital display, a TV monitor, an electronic-bookreader, a portable web-browser (e.g., iPad™), and a computer monitor. Itcan also be an entertainment device, including a portable DVD player,conventional DVD player, Blue-Ray disk player, video game console, musicplayer, such as a portable music player (e.g., iPod™), etc. It can alsobe a part of a device that provides control, such as controlling thestreaming of images, videos, sounds (e.g., Apple TV™), or it can be aremote control for an electronic device. It can be a part of a computeror its accessories, such as the hard drive tower housing or casing,laptop housing, laptop keyboard, laptop track pad, desktop keyboard,mouse, and speaker. The article can also be applied to a device such asa watch or a clock.

Embodiments of Pressure Sensors

The preferred embodiments include a pressure sensor comprising abulk-solidifying amorphous alloy, a pressure measurement and controlsystem electrically connected to the bulk-solidifying amorphous alloythat measures the change in resistivity of the bulk-solidifyingamorphous alloy, and presents a circuit option when the pressure reachesa predetermined value.

Another preferred embodiment described herein provides a switchcomprising an actuator capable of being depressed, a bulk-solidifyingamorphous alloy positioned adjacent the actuator, whereby pressing theactuator deforms the bulk-solidifying amorphous alloy. The switchfurther comprises a pressure measurement and control system electricallyconnected to the bulk-solidifying amorphous alloy that measures thechange in resistivity of the bulk-solidifying amorphous alloy, andpresents a switching function when the pressure reaches a predeterminedvalue.

An additional embodiment described herein provides an electronic devicethat includes at least one switch comprising an actuator capable ofbeing depressed, a bulk-solidifying amorphous alloy positioned adjacentthe actuator, whereby pressing the actuator deforms the bulk-solidifyingamorphous alloy. The switch further comprises a pressure measurement andcontrol system electrically connected to the bulk-solidifying amorphousalloy that measures the change in resistivity of the bulk-solidifyingamorphous alloy, and presents a switching function when the pressurereaches a predetermined value.

Some of the preferred embodiments are directed to a dome switch that canbe utilized on an electronic device to turn the device on and off, andto provide one or more buttons on the device that can be pressed toperform a function. For example, some devices may include a plurality ofswitching elements positioned about the device that underlie graphicimages on a display. These graphic images may be, for example, icons fora variety of programming elements, or keys on a keypad. The switches orbuttons therefore can be activated upon pressing the display on or nearthe graphic image. Use of a bulk-solidifying amorphous alloy as adeformable material that can deform upon application of pressureprovides a rapid and easy mechanism by which a user can select a featureon a device, and that provides a tactile feedback to the user.

A feature of the bulk-solidifying amorphous alloy is that its electricresistivity changes upon deformation. Accordingly, as pressure isapplied to the amorphous alloy, it will deform and as a consequence, itselectric resistance can be measured by connecting two ends of thebulk-solidifying amorphous alloy to a current source, and measuring thechange in resistivity as the alloy is deformed. Any method of measuringresistivity can be use, including a Wheatstone Bridge, a Chevron Bridge,a four-wire ohm circuit, or a constant current or voltage circuit. Anexemplary constant current circuit is illustrated in FIG. 3, which canform a part of control system 300 utilized in accordance with preferredembodiments.

Resistance can be measured by exciting the bridge with either a constantvoltage or a constant current source. Because R=V/I, if either V or I isheld constant, the other will vary with the resistance. Both methods canbe used in accordance with the embodiments. While there is notheoretical advantage to using a constant current source (FIG. 3) ascompared to a constant voltage, in some cases the bridge output will bemore linear in a constant current system. Also, if a constant currentsource is used, it eliminates the need to sense the voltage at thebridge; therefore, only two wires need to be connected to thebulk-solidifying amorphous alloy. The constant current circuit is mosteffective when dynamic strain is being measured. This is because, if adynamic force is causing a change in the resistance of thebulk-solidifying amorphous alloy 105, one would measure the time varyingcomponent of the output (V_(OUT)), whereas slowly changing effects suchas changes in lead resistance due to temperature variations would berejected. Using this configuration, temperature drifts become nearlynegligible.

The constant current control circuit of FIG. 3 forms a part of asimplified control system 300 that can be used to measure the change inresistance of bulk-solidifying amorphous alloy 105 as it is deformed byapplication of pressure. Connected to bulk-solidifying amorphous alloy105 are traces 96 and 98 to complete the circuit. The output voltageV_(OUT) can be connected to a control system (not shown) that determinesthe amount of pressure applied to bulk-solidifying amorphous alloy 105,depending on the value of V_(OUT) an its relation to the constantcurrent. The value of the ratio of V/V_(OUT) can be correlated to theamount of pressure applied to bulk-solidifying amorphous alloy 105depending on the composition of the alloy material, using techniquesknown in the art. For example, the control system 300 can be calibratedusing a specific alloy composition and subjecting the alloy to knownpressure intervals and measuring the change in resistivity using theconstant current control circuit of FIG. 3. Those skilled in the artwill be capable of determining the correlation between the change inresistivity of the bulk-solidifying amorphous alloy and the pressureapplied, using the guidelines provided herein. The control system 300then can provide a switching function when the change in resisitivityreaches a certain value, indicative of a certain pressure applied, forexample, the amount of pressure typically applied when pressing abutton.

A preferred embodiment described herein relates to dome switches. Thedome switches may be used in button assemblies in electronic devices.The following describes conventional electronic devices and domeswitching technology upon which the present invention provides animprovement. The following description and accompanying drawings wereexcerpted from U.S. Pat. No. 7,902,474, the disclosure of which isincorporated by reference herein in its entirety.

Any electronic device may benefit from the embodiments described herein.Suitable electronic devices may be portable electronic devices such aslaptop computers or small portable computers of the type that aresometimes referred to as ultraportables. Portable electronic devicesalso may be somewhat smaller devices. Examples of smaller portableelectronic devices include wrist-watch devices, pendant devices,headphone and earpiece devices, and other wearable and miniaturedevices.

If desired, the electronic devices may be, for example, handheldwireless devices such as cellular telephones, media players withwireless communications capabilities, handheld computers (also sometimescalled personal digital assistants), remote controllers, globalpositioning system (GPS) devices, and handheld gaming devices. Theelectronic devices may also be hybrid devices that combine thefunctionality of multiple conventional devices. Examples of hybridportable electronic devices include a cellular telephone that includesmedia player functionality, a gaming device that includes a wirelesscommunications capability, a cellular telephone that includes game andemail functions, and a portable device that receives email, supportsmobile telephone calls, has music player functionality and supports webbrowsing. These are merely illustrative examples.

An illustrative portable electronic device in accordance with anembodiment is shown in FIG. 4. Device 10 of FIG. 4 may be, for example,a handheld electronic device that supports 2G, 3G and/or 4G cellulartelephone and data functions, global positioning system capabilities,and local wireless communications capabilities (e.g., IEEE 802.11 andBluetooth®) and that supports handheld computing device functions suchas internet browsing, email and calendar functions, games, music playerfunctionality, etc. Device 10 may have housing 12. Antennas for handlingwireless communications may be housed within housing 12 (as an example).

Housing 12, which is sometimes referred to as a case, may be formed ofany suitable materials including, plastic, glass, ceramics, metal,alloy, or other suitable materials, or a combination of these materials.In some situations, housing 12 or portions of housing 12 may be formedfrom a dielectric or other low-conductivity material. Housing 12 orportions of housing 12 may also be formed from conductive materials suchas metal. An advantage of forming housing 12 from a dielectric materialsuch as plastic is that this may help to reduce the overall weight ofdevice 10 and may avoid potential interference with wireless operations.

Housing 12 may have a bezel, such as bezel 14. Bezel 14 may be formedfrom a conductive material and may serve to hold a display or otherdevice with a planar surface in place on device 10 and/or to form anesthetically pleasing trim around the edge of device 10. Display 16 maybe a liquid crystal display (LCD), an organic light emitting diode(OLED) display, or any other suitable display. The outermost surface ofdisplay 16 may be formed from one or more plastic or glass layers. Ifdesired, touch screen functionality may be integrated into display 16 ormay be provided using a separate touch pad device. An advantage ofintegrating a touch screen into display 16 to make display 16 touchsensitive is that this type of arrangement can save space and reducevisual clutter.

Display screen 16 (e.g., a touch screen) is merely one example of aninput-output device that may be used with electronic device 10. Ifdesired, electronic device 10 may have other input-output devices. Forexample, electronic device 10 may have user input control devices suchas button 19, and input-output components such as port 20 and one ormore input-output jacks (e.g., for audio and/or video). Button 19 maybe, for example, a menu button. Port 20 may contain a 30-pin dataconnector (as an example). Buttons, for some devices, are designed forreceipt of a human finger. As such, it may be desirable for the buttonsto have a design and size to receive a human finger or thumb. Openings22 and 24 may, if desired, form speaker and microphone ports. Speakerport 22 may be used when operating device 10 in speakerphone mode.Opening 23 may also form a speaker port. For example, speaker port 23may serve as a telephone receiver that is placed adjacent to a user'sear during operation. In the example of FIG. 4, display screen 16 isshown as being mounted on the front face of handheld electronic device10, but display screen 16 may, if desired, be mounted on the rear faceof handheld electronic device 10, on a side of device 10, on a flip-upportion of device 10 that is attached to a main body portion of device10 by a hinge (for example), or using any other suitable mountingarrangement.

A user of electronic device 10 may supply input commands using userinput interface devices such as button 19 and touch screen 16. Touchscreen 16 may be replaced with a display screen with a plurality ofbuttons positioned underneath the screen, each button optionally beingdesigned in a manner similar to button 19. Suitable user input interfacedevices for electronic device 10 include buttons (e.g., alphanumerickeys, power on-off, power-on, power-off, and other specialized buttons,etc.), a touch pad, pointing stick, or other cursor control device, amicrophone for supplying voice commands, or any other suitable interfacefor controlling device 10. Although shown schematically as being formedon the top face of electronic device 10 in the example of FIG. 4,buttons such as button 19 and other user input interface devices maygenerally be formed on any suitable portion of electronic device 10. Forexample, a button such as button 19 or other user interface control maybe formed on the side of electronic device 10. Buttons and other userinterface controls can also be located on the top face, rear face, orother portion of device 10. If desired, device 10 can be controlledremotely (e.g., using an infrared remote control, a radio-frequencyremote control such as a Bluetooth® remote control, etc.).

Electronic device 10 may have ports such as port 20. Port 20, which maysometimes be referred to as a dock connector, 30-pin data portconnector, input-output port, or bus connector, may be used as aninput-output port (e.g., when connecting device 10 to a mating dockconnected to a computer or other electronic device). Port 20 may containpins for receiving data and power signals. Device 10 may also have audioand video jacks that allow device 10 to interface with externalcomponents. Examples of locations in which antenna structures may belocated in device 10 include region 18 and region 21. These are merelyillustrative examples. Any suitable portion of device 10 may be used tohouse antenna structures for device 10 if desired.

A schematic diagram of an embodiment of an illustrative portableelectronic device such as a handheld electronic device is shown in FIG.5. Portable device 10 may be a mobile telephone, a mobile telephone withmedia player capabilities, a handheld computer, a remote control, a gameplayer, a global positioning system (GPS) device, a laptop computer, atablet computer, an ultraportable computer, a hybrid device thatincludes the functionality of some or all of these devices, or any othersuitable portable electronic device. As shown in FIG. 5, device 10 mayinclude storage 34. Storage 34 may include one or more different typesof storage such as hard disk drive storage, nonvolatile memory (e.g.,flash memory or other electrically-programmable-read-only memory),volatile memory (e.g., battery-based static or dynamicrandom-access-memory), etc.

Processing circuitry 36 may be used to control the operation of device10. Processing circuitry 36 may be based on a processor such as amicroprocessor and other suitable integrated circuits. With one suitablearrangement, processing circuitry 36 and storage 34 are used to runsoftware on device 10, such as internet browsing applications,voice-over-internet-protocol (VOIP) telephone call applications, emailapplications, media playback applications, operating system functions,etc. Processing circuitry 36 and storage 34 may be used in implementingsuitable communications protocols. Communications protocols that may beimplemented using processing circuitry 36 and storage 34 includeinternet protocols, wireless local area network protocols (e.g., IEEE802.11 protocols—sometimes referred to as Wi-Fi®), protocols for othershort-range wireless communications links such as the Bluetooth®protocol, protocols for handling 3G communications services (e.g., usingwide band code division multiple access techniques), 2G cellulartelephone communications protocols, etc. To minimize power consumption,processing circuitry 36 may include power management circuitry toimplement power management functions. Processing circuitry 36 also maybe used to control the functioning of the button(s) 19 present on device10 in which the circuitry enables conversion of the deformation ofbutton component(s) into an electrical output to initiate a switchfunction (e.g., on/off).

Input-output devices 38 may be used to allow data to be supplied todevice 10 and to allow data to be provided from device 10 to externaldevices. Display screen 16, button 19, microphone port 24, speaker port22, and dock connector port 20 are examples of input-output devices 38.Input-output devices 38 can include user input-output devices 40 such asbuttons, touch screens, joysticks, click wheels, scrolling wheels, touchpads, key pads, keyboards, microphones, cameras, etc. A user can controlthe operation of device 10 by supplying commands through user inputdevices 40. Display and audio devices 42 may include liquid-crystaldisplay (LCD) screens or other screens, light-emitting diodes (LEDs),and other components that present visual information and status data.Display and audio devices 42 may also include audio equipment such asspeakers and other devices for creating sound. Display and audio devices42 may contain audio-video interface equipment such as jacks and otherconnectors for external headphones and monitors.

Wireless communications devices 44 may include communications circuitrysuch as radio-frequency (RF) transceiver circuitry formed from one ormore integrated circuits, power amplifier circuitry, passive RFcomponents, antennas, and other circuitry for handling RF wirelesssignals. Wireless signals can also be sent using light (e.g., usinginfrared communications).

Device 10 can communicate with external devices such as accessories 46,computing equipment 48, and wireless network 49 as shown by paths 50 and51. Paths 50 may include wired and wireless paths. Path 51 may be awireless path. Accessories 46 may include headphones (e.g., a wirelesscellular headset or audio headphones) and audio-video equipment (e.g.,wireless speakers, a game controller, or other equipment that receivesand plays audio and video content), a peripheral such as a wirelessprinter or camera, etc.

Computing equipment 48 may be any suitable computer. With one suitablearrangement, computing equipment 48 is a computer that has an associatedwireless access point (router) or an internal or external wireless cardthat establishes a wireless connection with device 10. The computer maybe a server (e.g., an internet server), a local area network computerwith or without internet access, a user's own personal computer, a peerdevice (e.g., another portable electronic device 10), or any othersuitable computing equipment. Wireless network 49 may include anysuitable network equipment, such as cellular telephone base stations,cellular towers, wireless data networks, computers associated withwireless networks, etc. The antenna structures and wirelesscommunications devices of device 10 may support communications over anysuitable wireless communications bands.

To facilitate manufacturing operations, device 10 may be formed from twointermediate assemblies, representing upper and lower portions of device10. The upper or top portion of device 10 may sometimes be referred toas a tilt assembly. The lower or bottom may portion of device 10 maysometimes be referred to as a housing assembly. The tilt and housingassemblies may each be formed from a number of smaller components. Forexample, the tilt assembly may be formed from components such as display16 and an associated touch sensor. The housing assembly may include aplastic housing portion such as plastic housing portion 12 and printedcircuit boards. Integrated circuits and other components may be mountedon the printed circuit boards. During manufacturing, one end of the tiltassembly may be inserted into the housing assembly. The tilt assemblymay then be rotated (“tilted”) into place so that the upper surface ofthe tilt assembly lies flush with the upper edges of the housingassembly.

An exploded perspective view showing illustrative components of device10 is shown in FIG. 6. Tilt assembly 60 (shown in its unassembled statein FIG. 6) may include components such as cover 62, touch sensitivesensor 64, display unit 66, and frame 68. Cover 62 may be formed ofglass or other suitable transparent materials (e.g., plastic,combinations of one or more glasses and one or more plastics, etc.) andmay have a button hole 21 for accessing a button 19 on frame 68. Displayunit 66 may be, for example, a color liquid crystal display. Frame 68may be formed from one or more pieces. With one suitable arrangement,frame 68 may include metal pieces to which plastic parts are connectedusing an overmolding process. If desired, frame 68 may be formedentirely from plastic or entirely from metal.

Housing assembly 70 (shown in its unassembled state in FIG. 6) mayinclude a housing such as housing 12. Housing 12 may be formed ofplastic and/or other materials such a metal (metal alloys). For example,housing 12 may be formed of plastic to which metal members are mountedusing fasteners and/or a plastic overmolding process. Bezel 14 may beformed of plastic or other dielectric materials or may be formed frommetal or other conductive materials. Housing assembly 70 may alsoinclude one or more printed circuit boards such as printed circuit board72. Housing assembly 70 may also include components such as microphone76 for microphone port 24, speaker 78 for speaker port 22, and dockconnector 20, integrated circuits, a camera, ear speaker for port 23,audio jack, buttons, SIM card slot, etc.

A user of the device may provide input to the device by input devicessuch as button 19 or a touch screen. Button 19 is connected to frame 68and may reciprocate within a button hole such as button hole 21 in cover62. When depressed by a user, the control circuitry recognizes adeflection of the button component(s), and when the deflection reaches apredetermined limit, which typically corresponds to a predeterminedamount of pressure (to avoid switching for inadvertent minor contactwith button 19), the circuitry provides a switching function (on/off),to complete a circuit, or to disrupt a circuit. When this condition isdetected, an intended function may be performed by the device.

Dome switches are sometimes used in handheld devices. A dome switch hasa bubble or “dome” with a conductive underside. The dome is typicallypositioned over a “landing pad” on a printed circuit board substrate.FIG. 7 illustrates the landing pad on a printed circuit board of aconventional dome switch assembly. Printed circuit board 94 provides alanding pad area for the dome switch. Printed circuit board 94 has twotraces: a first trace 96 that is connected to a dome switch contact suchas fixed outer contact ring 92 and a second trace 98 that is connectedto a second dome contact such as fixed center contact 90. Printedcircuit board 94 mechanically supports and electrically connects firsttrace 96 with fixed outer contact ring 92 and second trace 98 with innercontact 90 using conductive traces.

In contrast to traces 96 and 98, which lie beneath or within thesubstrate of printed circuit board 94, fixed center contact 90 and fixedouter contact ring 92 are formed on the top of printed circuit board 94and are exposed so that corresponding conductive material within thedome may come into contact with them. In an electrical sense, fixedcenter contact 90 and fixed outer contact ring 92 form an open circuitsuch that, when they are electrically connected, they complete thecircuit (i.e., the switch is closed). Fixed center contact 90 and fixedouter contact ring 92 are typically made of gold.

The “landing pad” or strike zone of the conductive dome positioned overprinted circuit board 94 has a footprint. That is, the conductive zonemust cover the footprint in order to actuate the switch. In a system ofthe type described in FIG. 7, the conductive dome must cover both theinner contact ring 90 and the outer contact ring 92. As such, domestructures, in order to ensure contact and actuation, must cover thearea of the circle defined by ring 92. A conventional dome structure isgenerally larger than ring 92 to provide space for the dome to beproperly attached to board 94.

FIG. 7 is illustrative of a conventional dome switch in an unactuated orrelaxed position. Conventional dome switch 100 has printed circuit board94, copper traces 96 and 98, fixed center contact 90 and fixed outercontact ring 92 as discussed in connection with FIG. 4. Dome switch 100further has a dome 101 made of polyethylene terephthalate (“PET”) 104with underlying adhesive 103 that connects dome 101 to printed circuitboard 94. Dome 101 has an underside 115 coated with a conductivematerial such as graphite or gold. Around the perimeter of dome 101,conductive underside 115 is electrically connected to fixed outercontact ring 92 in the dome relaxed state. Dome switch 100 further hasan associated button 102 for actuating switch 100 by finger 108. Button102 may bear against dome 101 at contact structure 106.

FIG. 8 is illustrative of dome switch 100 in an actuated or collapsedposition. When button 102 is pushed downwardly as shown by arrow 110 by,for example, finger 108, dome 101 is compressed and collapsed.Conductive underside 115 comes into contact with fixed center contact 90such that fixed center contact 90 and fixed outer contact ring 92 formcompleted circuit 112 through conductive underside 115, fixed centercontact 90, and fixed outer contact ring 92, thereby closing the switch.

Conventional dome switch 100 consumes an area on printed circuit board94 of at least πr², where r is the radius of ring 92. As such, the areabeneath the dome switch, which could be used otherwise to houseelectrical components such as resistors, capacitors, etc., is consumedby the landing pad for the dome switch. Conventional dome switches alsomay become permanently deformed upon repeated use due to the physicallimitations on the conductive material 115. Use of gold as a conductivematerial 115 also is expensive.

The preferred embodiments described herein represent an improvement overthe known dome switches. The use of a bulk-solidifying amorphous alloyas a deformable material positioned, for example, beneath film 104provides for a more reliable switch that can be used repeatedly, stillprovide the tactile feedback of a conventional dome switch, utilize lessmaterial, and use up less space on printed circuit board 94.

FIG. 9 is illustrative of a dome switch of one embodiment in anunactuated or relaxed position. Dome switch 900 has printed circuitboard 94, traces 96 and 98, and contacts 95 and 92. Contacts 95 and 92may form a ring, or may be point contacts with bulk-solidifyingamorphous alloy material 105. Because the contacts need not form a ring,bulk-solidifying amorphous alloy 105 need not be in the shape of a dome,but rather can be in the shape of a rectangular or square film connectedat each end to contacts 92 and 95, respectively. Bulk-solidifyingamorphous material 15 also may used as the entire dome 101, or may bepositioned underneath a protective film 104, which may be formed of anysuitable film-forming material. It is preferred to use a protective film104, however, to connect the dome 101 to printed circuit board 94 viaadhesive 103. In this manner, adhesive 103 is not in direct contact withbulk-solidifying amorphous alloy material 105, and consequently, willnot interfere with the measurement of the amount of deflection exhibitedby material 105 when the switch is actuated. As shown in FIG. 9, domeswitch 900 further has an associated button 102 for actuating switch 900by finger 108. Button 102 may bear against dome 101 at contact structure106, or button 102 may directly contact dome 101.

FIG. 10 is illustrative of dome switch 900 in an actuated or collapsedposition. When button 102 is pushed downwardly as shown by arrow 110 by,for example, finger 108, dome 101 is compressed and collapsed, therebydeforming bulk-solidifying amorphous alloy material 105. while theactuated position illustrated in FIG. 10 shows bulk-solidifyingamorphous alloy material 105 flattened, it will be understood thatbulk-solidifying amorphous alloy material 105 may be deformed only inthe center portion or only deformed partially so that it is notflattened. Unlike the conventional dome switch described above, there isno center contact pad 90 that requires the dome to be fully compacted tocontact pad and complete the circuit. This negates the need to fullydeform the material 105 to its flattened state, thereby savingadditional space.

FIG. 11 is an exploded view of a dome switch in accordance with anotherembodiment of the invention. Dome switch 900 comprises an actuator orbutton 102 and a film 104, preferably a moisture barrier film thatprevents moisture from contacting the deformable bulk-solidifyingamorphous alloy 105. Film 104 also preferably is comprised of a suitableplastic material capable of repeated deformation and reconfiguration toits original shape. Switch 900 also includes a bulk-solidifyingamorphous alloy 105, also capable of repeated deformation andreconfiguration to its original shape. Bulk-solidifying amorphous alloy105 is capable of being seated within contact plate 960, which includescontacts 92 and 95 that can be in turn connected to traces 96 and 98, asdescribed above. Contact plate 960 may be comprised of any suitableconductive material, and may include only one contact 92 and one contact95, or a plurality of each. Finally, contact plate 960 may be seated on,within, or as shown in FIG. 11, below the switch body 950. Switch body950 preferably includes through holes that make electrical contactbetween the bulk-solidifying amorphous alloy 105 and contact plate 960,or alternatively, switch body 950 may itself be electrically conductive.

In operation, when a user presses down on button 102 in direction ofarrow 110, (FIG. 10), the pressure exerted by the user's finger 108,causes bulk-solidifying amorphous alloy material 105 to deform. Thedegree of deformation of bulk-solidifying amorphous alloy material 105will be directly proportional to the amount of pressure applied by theuser's finger 108. As described above with reference to FIG. 3, traces96 and 98 preferably are connected to a control system capable ofmeasuring the amount of deflection, and hence pressure applied by theuser's finger 108. Preferably, traces 96 and 98 are connected tobulk-solidifying amorphous alloy material 105 via a constant currentcircuit.

In operation, a small amount of current is supplied to traces 96 and 98.When in the unactuated position (FIG. 9) the voltage measured by thecontrol system 300 will indicate the resistivity of bulk-solidifyingamorphous alloy material 105 in its relaxed state. When actuated (FIG.10), bulk-solidifying amorphous alloy material 105 will be deformed andthe voltage measured by the circuitry that forms a part of controlsystem shown in FIG. 3 will change due to the change in resistivity ofthe now-deformed bulk-solidifying amorphous alloy material 105. It willbe understood that the degree of deformation of bulk-solidifyingamorphous alloy material 105 will be proportional to the amount of forceapplied, and consequently, the change in resistivity measured by controlsystem will be proportional to the amount of force applied.

The control system 300 (FIG. 3) therefore can be designed so that whenthe degree of deformation of bulk-solidifying amorphous alloy material105 reaches a predetermined limit, which is related to a predeterminedamount of force applied, a switching function is provided. The switchingfunction can either be to turn on a given feature, or turn it off if itis already on. In a particularly preferred embodiment, the amount offorce typically applied by a user's finger in actuating a dome switch,is in the range of from about 2.5 to about 5.0 N, which correlates to adeflection of bulk-solidifying amorphous alloy material 105 (ordepression or “travel”) within the range of from about 0.075 mm to about0.25 mm. As a particularly preferred embodiment, the control system canbe designed to perform the switching function when the change inresistivity measured by the control circuitry that forms a part ofcontrol system 300 correlates with a pressure of about 3.4 N, or atravel of bulk-solidifying amorphous alloy material 105 of about 0.15mm.

Another embodiment is the use of the bulk-solidifying amorphous alloymaterial as a pressure sensing diaphragm or strain gauge, used in anyconventional pressure sensor system including pressure transducers,pressure transmitters, pressure indicators, piezometers, manometers, andthe like. Such a pressure sensor operates in a manner similarly to thedome switch embodiment described above, except that instead of a user'sfinger actuating a button 102, external pressure is exerted onbulk-solidifying amorphous alloy 105 to cause it to deform. The degreeof deformation then can be correlated to the pressure by virtue of thechange in resistivity measured by the constant current control circuitillustrated in FIG. 3. Instead of performing a switching function, thecontrol circuit would measure the V_(OUT), correlate V_(OUT) to a givenpressure depending on the correlation between resistivity and pressurefor the particular material employed as bulk-solidifying amorphousmaterial 105, and then provide a read-out of the pressure measured bythe sensor. Those skilled in the art will be capable of designing asuitable pressure sensor using the guidelines provided herein.

Use of a bulk-solidifying amorphous alloy described herein instead ofthe conventional diaphragms and/or strain gauges known in the art,provides for a larger deformation of the respective materials prior tofailure. Accordingly, a pressure sensor that utilizes a bulk-solidifyingamorphous alloy material as the deformable material by which thepressure is measured has improved sensitivity and can withstand higherpressures than conventional pressure sensors.

Suitable bulk-solidifying amorphous alloys for use as material 105 inthe preferred embodiments are described in more detail above.

In one embodiment also relates to a pressure sensor where thedeformation of a diaphragm is measured using either a strain gauge, acapacitance or induction. Another embodiment relates to a binarypressure sensor, that senses a single threshold value, wherein thesensing could be done by closing an electrical circuit.

While the invention has been described with reference to particularlypreferred embodiments, those skilled in the art will appreciate thatvarious modifications may be made thereto without departing from thespirit and scope thereof.

What is claimed:
 1. A pressure sensor comprising: a bulk-solidifyingamorphous alloy capable of being deformed upon being subjected topressure; and a pressure measurement system electrically connected tothe bulk-solidifying amorphous alloy that measures the change inresistivity of the bulk-solidifying amorphous alloy depending on thedegree of deformation of the bulk-solidifying amorphous alloy, andprovides an output equal to the pressure applied to deform thebulk-solidifying amorphous alloy.
 2. The pressure sensor as claimed inclaim 1, wherein the pressure measurement system comprises a constantcurrent control circuit.
 3. The pressure sensor as claimed in claim 1,wherein the alloy is described by the following molecular formula: (Zr,Ti)_(a)(Ni, Cu, Fe)_(b)(Be, Al, Si, B)_(c), wherein “a” is in the rangeof from 30 to 75, “b” is in the range of from 5 to 60, and “c” is in therange of from 0 to 50 in atomic percentages.
 4. The pressure sensor asclaimed in claim 1, wherein the alloy is described by the followingmolecular formula: (Zr, Ti)_(a)(Ni, Cu)_(b)(Be)_(c), wherein “a” is inthe range of from 40 to 75, “b” is in the range of from 5 to 50, and “c”is in the range of from 5 to 50 in atomic percentages.
 5. The pressuresensor as claimed in claim 1, wherein the bulk solidifying amorphousalloy can sustain strains up to 1.5% or more without any permanentdeformation or breakage.
 6. A switch comprising: an actuator capable ofbeing depressed; a bulk-solidifying amorphous alloy positioned adjacentthe actuator, whereby pressing the actuator deforms the bulk-solidifyingamorphous alloy; a pressure measurement and control system electricallyconnected to the bulk-solidifying amorphous alloy that measures thechange in resistivity of the bulk-solidifying amorphous alloy dependingon the degree of deformation of the bulk-solidifying amorphous alloy,and presents a switching function when the degree of deformation of thebulk-solidifying amorphous alloy reaches a predetermined value.
 7. Theswitch as claimed in claim 6, wherein the pressure measurement andcontrol system comprises a constant current circuit that applies acurrent to the bulk-solidifying amorphous alloy and measures the changein resistivity of the bulk-solidifying amorphous alloy as the materialis deformed.
 8. The switch as claimed in claim 7, wherein the change inresistivity is measured as a change in output voltage from the circuit,and the change in output voltage is correlated to the pressure appliedto deform the bulk-solidifying amorphous alloy.
 9. The switch as claimedin claim 8, wherein the pressure measurement and control system presentsa switching function when the pressure applied to deform thebulk-solidifying amorphous alloy is measured to be within the range offrom about 2.5 to about 5.0 N.
 10. The switch as claimed in claim 9,wherein the pressure measurement and control system presents a switchingfunction when the pressure applied to deform the bulk-solidifyingamorphous alloy is measured to be about 3.4 N.
 11. The switch as claimedin claim 8, wherein the pressure measurement and control system presentsa switching function when the amount of deflection of thebulk-solidifying amorphous alloy is within the range of from about 0.075mm to about 0.25 mm.
 12. The switch as claimed in claim 11, wherein thepressure measurement and control system presents a switching functionwhen the amount of deflection of the bulk-solidifying amorphous alloy isabout 0.15 mm.
 13. The switch as claimed in claim 6, wherein a film ispositioned between the actuator and the bulk-solidifying amorphousalloy.
 14. The switch as claimed in claim 6, wherein the alloy isdescribed by the following molecular formula: (Zr, Ti)_(a)(Ni, Cu,Fe)_(b)(Be, Al, Si, B)_(c), wherein “a” is in the range of from 30 to75, “b” is in the range of from 5 to 60, and “c” is in the range of from0 to 50 in atomic percentages.
 15. The switch as claimed in claim 6,wherein the alloy is described by the following molecular formula: (Zr,Ti)_(a)(Ni, Cu)_(b)(Be)_(c), wherein “a” is in the range of from 40 to75, “b” is in the range of from 5 to 50, and “c” is in the range of from5 to 50 in atomic percentages.
 16. The method as claimed in claim 6,wherein the bulk solidifying amorphous alloy can sustain strains up to1.5% or more without any permanent deformation or breakage.
 17. Anelectronic device comprising a switch, the switch comprising: anactuator capable of being depressed; a bulk-solidifying amorphous alloypositioned adjacent the actuator, whereby pressing the actuator deformsthe bulk-solidifying amorphous alloy; a pressure measurement and controlsystem electrically connected to the bulk-solidifying amorphous alloythat measures the change in resistivity of the bulk-solidifyingamorphous alloy depending on the degree of deformation of thebulk-solidifying amorphous alloy, and presents a switching function whenthe degree of deformation of the bulk-solidifying amorphous alloyreaches a predetermined value.
 19. The electronic device as claimed inclaim 18, wherein the pressure measurement and control system comprisesa constant current circuit that applies a current to thebulk-solidifying amorphous alloy and measures the change in resistivityof the bulk-solidifying amorphous alloy as the material is deformed. 20.The electronic device as claimed in claim 18, wherein the device isselected from one or more of the group consisting of a telephone, a cellphone, a land-line phone, a smart phone, an electronic emailsending/receiving device a television, an electronic-book reader, aportable web-browser, a computer monitor, a DVD player, a Blue-Ray diskplayer, a video game console, a music player, a device that providescontrolling the streaming of images, videos, and sounds, a remotecontrol, a watch, and a clock.